Sintesis Lapisan Titanium Dioxide dengan Doping Ganda Copper-Silver untuk Aplikasi Fotoanoda Dye Sensitized Solar Cell
DOI:
https://doi.org/10.25077/jfu.9.3.415-420.2020Abstract
Lapisan tipis TiO2 dengan doping ganda Cu-Ag untuk aplikasi fotoanoda Dye Sensitized Solar Cell telah disintesis. Lapisan disintesis dengan metode Doctor Blade dengan variasi konsentrasi doping Cu-Ag sebesar 0 mol%, 1 mol%, 2 mol%, 3 mol%, dan 4 mol%. Lapisan dikarakterisasi dengan X-ray Diffraction untuk mengetahui struktur, fasa, dan ukuran kristalnya. Karakterisasi X-ray diffraction dilakukan pada lapisan tanpa doping dan lapisan dengan doping 1%. Struktur yang dihasilkan adalah tetragonal dan fasa anatase. Ukuran kristal yang didapatkan dari pengolahan data X-ray diffraction dengan Metode Scherer adalah 58,74 nm untuk lapisan tanpa doping dan 57,54 untuk lapisan doping 1%. Nilai celah pita energi yang diperoleh dari karakterisasi UV-Vis Spectrometry lapisan memiliki celah pita energi dengan rentang 3,1 - 3,2 eV. Berdasarkan hasil penelitian, nilai celah pita energi semakin kecil dengan penambahan doping ganda Cu-Ag. Lapisan yang telah disusun menjadi DSSC tipe sandwich kemudian dikarakterisasi menggunakan perangkat I-V Test untuk mengetahui efisiensinya. Efisiensi maksimum yang dicapai adalah 2,46%
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Cu-Ag co-doped TiO2 thin film for photoanode of Dye-Sensitized Solar Cell application have been synthesized. The film was synthesized using the Doctor Blade method with different concentrations of Cu-Ag (0, 1, 2, 3, 4) mol %. The films were characterized by X-Ray Diffraction for their structural, phase, and crystallite size. X-ray diffraction did at undoped and 1% co-doped concentration. X-ray diffraction data revealed the formation of the tetragonal and anatase phase for both undoped and co-doped films. The crystallite size determined using the Scherer method is 58,74 nm for undoped films and 57,54 nm for 1% co-doped concentration films. UV-Vis spectrometry was used for the characterization of the optical properties of films. Films were having an average total band gap of 3,1 - 3,2 eV. From the investigation, the value of optical bandgap decreased by the increase of Cu-Ag concentration. The films that arranged to be sandwich-type then characterized by using the I-V test device. The maximum efficiency is 2.46% at 1% dopant addition.
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